on front silicon DRIE (Bosch Process) |
|
| Process characteristics: |
| Depth |
|
|---|
| Etch rate |
0.5 .. 4 µm/min |
|---|
| Gas |
O2, N2, Ar, SF6, C4H8 |
|---|
| Material |
silicon |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 60, silicon dioxide: 150 |
|---|
| Sides processed |
either |
|---|
| Uniformity |
-0.1 .. 0.1 |
|---|
| Wafer size |
|
|---|
| Equipment |
STS DRIE |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon carbide |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
| Comments: |
|
