Process Hierarchy

  Phosphorus diffusion (POCl3)
Process characteristics:
Sheet resistance
Desired sheet resistance
Sheet resistance*
Desired sheet resistance, must be 10 .. 100 Ω/square
10 .. 100 Ω/square
Ambient to which substrate is exposed during processing
phosphoryl chloride, nitrogen
Film grown
Material grown during a process
silicon dioxide
Growth rate
Rate at which film grows (linear approximation)
0.03 nm/min
Process duration 0.5 .. 3 hour
Sides processed both
Temperature 900 .. 1100 °C
Wafer size
Wafer size
Equipment FNA3
Equipment characteristics:
Batch sizes 150 mm: 25
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm