Process Hierarchy

on front
  Boron diffusion and anneal
Process characteristics:
Diffusion depth
Diffusion depth*
Ambient to which substrate is exposed during processing
Dopant concentration
Number of atoms per meter cubed
8e+19 atom/cc
Excluded materials gold (category), copper
Film grown
Material grown during a process
Growth rate
Rate at which film grows (linear approximation)
0.25 nm/min
Material boron
Pressure of process chamber during processing
1 atm
Sides processed either
Temperature 1100 °C
Wafer size
Wafer size
Equipment Tystar Boron diffusion furnace
Equipment characteristics:
Batch sizes 100 mm: 50, 150 mm: 50
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 800 µm
Extra terms