on front Boron diffusion and anneal |
|
| Process characteristics: |
| Diffusion depth |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
|---|
| Dopant concentration Number of atoms per meter cubed |
8e+19 atom/cc |
|---|
| Excluded materials |
gold (category), copper |
|---|
| Film grown Material grown during a process |
BSG |
|---|
| Growth rate Rate at which film grows (linear approximation) |
0.25 nm/min |
|---|
| Material |
boron |
|---|
| Pressure Pressure of process chamber during processing |
1 atm |
|---|
| Sides processed |
either |
|---|
| Temperature |
1100 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Tystar Boron diffusion furnace |
| Equipment characteristics: |
| Batch sizes |
100 mm: 50, 150 mm: 50 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 800 µm |
|---|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
