|
| Ambient Ambient to which substrate is exposed during processing |
sulfur hexafluoride |
|---|
| Depth |
1000 Å |
|---|
| Etch rate |
1000 Å/min |
|---|
| Etch type |
dry isotropic |
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| Material |
BCB 4024-40 |
|---|
| Pressure Pressure of process chamber during processing |
250 mTorr |
|---|
| Sides processed |
either |
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| Temperature |
27 °C |
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| Wafer size |
|
|---|
| Equipment |
Unaxis SLR 720
|
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 125 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
conductive platen, quartz |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
| Comments: |
|
