Process Hierarchy

on front
  Gallium Nitride (GaN), ICP Etch (Versaline)
Process characteristics:
must be 0 .. 5 µm
0 .. 5 µm
Etch rate 1.6 µm/min
Material gallium nitride
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment VLR 700 Cluster -Chlorine Etch Chamber
Equipment characteristics:
Batch sizes 100 mm: 25
Wafer geometry
Types of wafers this equipment can accept
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), gallium phosphide, indium phosphide, gallium arsenide, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 700 µm