Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Thermocompression bonding
Process characteristics:
1st bonded material
Specify first material in bonded pair.
1st bonded material*
Specify first material in bonded pair.
2nd bonded material
Specify second material in bonded pair.
2nd bonded material*
Specify second material in bonded pair.
Contact force
Preferred contact force applied when bonding materials (if known).
Contact force*
Preferred contact force applied when bonding materials (if known)., must be 1 .. 3900 N
1 .. 3900 N
Temperature
Preferred bonding temperature (if known).
Temperature
Preferred bonding temperature (if known). , must be 25 .. 450 °C
25 .. 450 °C
Alignment tolerance
Registration of CAD data to features on wafer
 5 µm
Batch size 4
Wafer size
Wafer size
Equipment Karl Suss Bond aligner
  • Maximum bond stack height is 6mm
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Pyrex (Corning 7740), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • Please note that the pricing is based on two bonding operations, in other words, the batch size for the process is 2 pairs, hence 4 wafers.