Process Hierarchy

  Anodic bonding (air, with alignment)
Alignment type
Method used to align materials to be bonded.
Ambient to which substrate is exposed during processing
Duration 30 min
Pressure of process chamber during processing
1 atm
Temperature 400 °C
Voltage 800 V
Wafer size
Wafer size
Equipment Wafer bonder
Equipment characteristics:
Batch sizes 100 mm: 2, 25 mm: 2, 50 mm: 2, 75 mm: 2
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Borofloat (Schott), Pyrex (Corning 7740), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm