on front Tantalum Dry Etch (Fluorine) Down |
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| Process characteristics: |
| Depth |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
sulfur hexafluoride |
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| Etch rate |
100 Å/min |
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| Etch type |
dry isotropic |
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| Material |
tantalum |
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| Pressure Pressure of process chamber during processing |
250 mTorr |
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| Sides processed |
either |
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| Temperature |
27 °C |
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| Wafer size |
|
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| Equipment |
Unaxis SLR 720
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| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 125 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
conductive platen, quartz |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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