Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Zinc Oxide wet etch Down
  1 Zinc Oxide wet etch
Materialzinc oxide
on front
  2 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 3 µm
0 .. 3 µm
Batch size 12
Material zinc oxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 4, polysilicon: 50, silicon nitride: 50, zinc oxide: 1
Wafer size
Wafer size