Process Hierarchy

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  Boron diffusion
Process characteristics:
Diffusion depth
Diffusion depth*
Ambient to which substrate is exposed during processing
nitrogen, oxygen
Batch size 24
Dopant concentration
Number of atoms per meter cubed
8e+19 atom/cc
Excluded materials gold (category), copper
Film grown
Material grown during a process
Growth rate
Rate at which film grows (linear approximation)
0.25 nm/min
Loading effects
Free form text field for description of loading effects (e.g. bullseye)
Material boron
Pressure of process chamber during processing
1 atm
Sides processed either
Temperature 1175 °C
Wafer size
Wafer size
Equipment MFL furnace 323-2
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
silicon carbide
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 550 µm
  • Wafers must be RCA cleaned within 24 hours of loading.
Extra terms