Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Silicon DRIE (Bosch Process) Plasma Therm 770
Process characteristics:
Depth
Depth*
must be 1 .. 750 µm
1 .. 750 µm
Aspect ratio 15
Etch rate 2 µm/min
Gas SF6, C4F8, Argon, O2
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 AZ 5214: 75, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Plasma Therm 770 Silicon DRIE (Bosch Process)
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 75 mm: 1
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 electrostatic chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 700 µm