|
| Batch size |
12 |
|---|
| Exposure time |
3 min |
|---|
| Intensity Intensity of light source |
700 mW/cm/cm |
|---|
| Materials |
OCG 825 35CS, Arch OiR 897-10i |
|---|
| Sides processed |
either |
|---|
| Temperature |
120 °C |
|---|
| Wavelength Wavelength of light used during the exposure |
280 .. 300 nm |
|---|
| Wafer size |
|
|---|
| Equipment |
UV Photostabilizer System |
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
heated plate |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon germanium, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
| Comments: |
|
