Process Hierarchy

  Aligned fusion prebond
Process characteristics:
Second substrate side bonded
Second substrate side bonded*
Substrate side bonded
Substrate side bonded*
Alignment tolerance
Registration of CAD data to features on wafer
5 µm
Alignment type
Method used to align materials to be bonded.
Batch size 2
Process duration 30 min
Second substrate diameters 100 mm
Second substrate geometry wafer
Second substrate material silicon
Second substrate thickness 400 .. 1000 µm
Temperature 1100 °C
Wafer holder
Device that holds the wafers during processing.
aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer size
Wafer size
Equipment Karl Suss Bond aligner
  • Maximum bond stack height is 6mm
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • The Si-Si pair are aligned and prebonded using the Karl Suss BA6 - then N2 annealed in a seperate furnace to provide the fusion bonding.