Process Hierarchy

on front
  Silicon Nitride RIE (clean)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1.5 µm
0 .. 1.5 µm
Allowed metals Al, Mo, W, Ti, Ni, Ta
Edge profile
Free form text field for description of edge profile
Etch rate 150 Å/min
Material silicon nitride
Pressure of process chamber during processing
100 mTorr
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2, silicon dioxide: 1, silicon nitride: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment PlasmaTherm SL 700
Equipment characteristics:
Batch sizes 100 mm: 4
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 3000 µm