Process Hierarchy

on front
  Plating preparation (descum)
Ambient to which substrate is exposed during processing
oxygen/carbon tetrafluoride
Material SU-8
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
SU-8: 1
Sides processed either
Wafer size
Wafer size
Equipment Plasma etcher
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
aluminum plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm