on front Silicon freckle plasma etch |
|
| Process characteristics: |
| Depth Depth of material removed by etch process |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
chloropentafluorethane, sulfur hexafluoride |
|---|
| Batch size |
4 |
|---|
| Etch rate |
0.19 µm/min |
|---|
| Loading effects Free form text field for description of loading effects (e.g. bullseye) |
minimal |
|---|
| Material |
silicon |
|---|
| Pressure Pressure of process chamber during processing |
100 mTorr |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 6.3, silicon dioxide: 21, silicon: 1, titanium/tungsten: 2, tungsten: 1.7 |
|---|
| Sides processed |
either |
|---|
| Temperature |
23 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Drytek2 |
| Equipment characteristics: |
| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, rectangular |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
300 .. 600 µm |
|---|
| Wafer holder Device that holds the wafers during processing. |
electrode |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (single crystal), silicon, silicon on insulator, silicon on sapphire |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
|---|
| Comments: |
|
