Process Hierarchy

  Buffered oxide etch
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 5 µm
0 .. 5 µm
Batch size 25
Solutions and their concentrations.
HF (buffered)
Material silicon dioxide
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
silicon dioxide: 1
Sides processed both
Temperature 25 °C
Wafer size
Wafer size
Equipment Wet bench
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1200 µm