Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Anodic bonding
Process characteristics:
1st bonded material
Specify first material in bonded pair.
1st bonded material
Specify first material in bonded pair.
2nd bonded material
Specify second material in bonded pair.
2nd bonded material
Specify second material in bonded pair.
Alignment tolerance
Tolerance of alignment if needed.
Alignment tolerance
Tolerance of alignment if needed.
unconstrained
Alignment type
Method used to align materials to be bonded.
Alignment type
Method used to align materials to be bonded.
Ambient
Preferred bonding environment (if known).
Ambient
Available  
Selected
Preferred bonding environment (if known).
Bond strength
Required strength of bond (if known).
Bond strength
Required strength of bond (if known).
unconstrained
Contact force
Preferred contact force applied when bonding materials (if known).
Contact force
Preferred contact force applied when bonding materials (if known).
unconstrained
Temperature
Preferred bonding temperature (if known).
Temperature
Preferred bonding temperature (if known).
unconstrained
Equipment
Comments:
  • The substrates are bonded at elevated temperature (~400 degC) by placing and clamping the substrates between two metal electrodes. A high DC potential (up to >1kV) is applied between the electrodes creating an electrical field, which penetrates the substrates. One substrate is a glass that contains sodium ions, which at the elevated temperature are displaced from the bonding surface of the glass by the applied electrical field. The depletion of sodium ions near the surface of the glass makes the surface highly reactive with the silicon surface of the other substrate forming a solid chemical bond.