Photoresist strip (metal)  |  
  | 
        
        | Batch size | 
            25 | 
            
            | Etchant Solutions and their concentrations.  | 
            PRX-127 | 
            
            | Material | 
            photoresist (category) | 
            
            | Process duration | 
            20 min | 
            
            | Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)  | 
            photoresist (category): 1 | 
            
            | Sides processed | 
            both | 
            
            | Temperature | 
            50 °C | 
            
            
            | Wafer size | 
            
 | 
            
            
            
            | Equipment | 
            Metal wet bench | 
            
            
            
              | Equipment characteristics: | 
            
            | Wafer geometry Types of wafers this equipment can accept  | 
            no-flat, 1-flat | 
            
            | Wafer holder Device that holds the wafers during processing.  | 
            teflon cassette | 
            
            | Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself).  | 
            silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire | 
            
            | Wafer thickness List or range of wafer thicknesses the tool can accept  | 
            300 .. 700 µm | 
            
            
            
              | Comments: | 
            
            
        
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