Silicon DRIE: View
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Depth of material removed by etch process
Depth of material removed by etch process, must be 1 .. 450 µm
1 .. 450 µm
1.5 .. 5 µm/min
Shape of field with dimensions characterized by the maximum field size
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 75, silicon: 1
Only silicon with photoresist and/or silicon dioxide is allowed.
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
List or range of wafer thicknesses the tool can accept
100 .. 2000 µm
Only silicon is allowed with either photoresist
or oxide as the etch mask.
For deep etches thick photoresist or thick
silicon dioxide films can be used for masking.
Polymer is cleaned in standard hot acetone soak
followed by a piranha clean.
450.1-600 um: custom quote
How to Start