on front Contact G-line exposure |
|
| Batch size |
1 |
|---|
| Depth |
10 µm |
|---|
| Excluded materials |
gold (category), copper |
|---|
| Feature geometry Shape of feature with dimensions characterized by the minimum feature size |
line |
|---|
| Field geometry Shape of field with dimensions characterized by the maximum field size |
circle |
|---|
| Intensity Intensity of light source |
50 mW/cm/cm |
|---|
| Max field size |
90 mm |
|---|
| Min feature size |
2 µm |
|---|
| Proximity Separation of mask and wafer (separation of 0 um indicates contact) |
0 µm |
|---|
| Sides processed |
either |
|---|
| Wavelength Wavelength of light used during the exposure |
405 nm |
|---|
| Wafer size |
|
|---|
| Equipment |
Karl Suss MA6 |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
vacuum chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon dioxide, alumina |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
| Extra terms |
Customer agrees that wafers, masks, and other materials
incorporating any process(es) provided by this fabrication site
are to be used solely for non-commercial research
purposes.
|
