Process Hierarchy

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  Silicon dioxide plasma etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
freon
Aspect ratio 10
Batch size 1
Etch rate 0.5 µm/min
Excluded materials gold (category), copper
Material silicon dioxide
Pressure
Pressure of process chamber during processing
2.8 Torr
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 2.5, silicon dioxide: 1
Sides processed either
Temperature 120 °C
Wafer size
Wafer size
Equipment Tegal 803
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
alumina
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
400 .. 600 µm
Extra terms