Process Hierarchy

  Phosphorus diffusion
Ambient to which substrate is exposed during processing
Batch size 25
Film grown
Material grown during a process
silicon dioxide
Growth rate
Rate at which film grows (linear approximation)
0.03 nm/min
Material phosphoryl chloride
Process duration 3 hour
Sides processed both
Temperature 950 °C
Thermal duration 45 min
Wafer size
Wafer size
Equipment Tylan Furnace (Phosphorus diffusion, Tube #6)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz tube
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • Dopant concentration depends on the solid solubility of the impurity elements in silicon. The solid solubility of phosphorus in the silicon at 950 degC is about 2E21 atoms/cc.