Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  5X i-line photolithography (image reversal) Down
  1 HMDS Vapor Prime
on front
  2 Photoresist Spin Coat ACS200 (AZ 5214E)
  3 Photoresist Softbake ACS200
  4 5x i-line step & expose
  5 Photoresist Softbake ACS200
  6 Flood Expose
  7 Photoresist Develop (5214E)
  8 Linewidth Microscope Measurement
Process characteristics:
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer, must be 0.3 .. 5 µm
0.3 .. 5 µm
Min feature size
Minimum feature size in the design that will be written on the wafer. (the corresponding feature size on the mask should be 5 times larger.)
Min feature size*
Minimum feature size in the design that will be written on the wafer. (the corresponding feature size on the mask should be 5 times larger.) , must be 0.8 .. 10 µm
0.8 .. 10 µm
Perform edge bead removal
Perform edge bead removal*
yes no
Perform linewidth metrology
Two measurement per wafer
Perform linewidth metrology*
yes no
Two measurement per wafer
Perform microscope inspection
30 mins inspection per wafer
Perform microscope inspection*
yes no
30 mins inspection per wafer
Perform stylus profilometry
One measurement per wafer, for features >40um in width.
Perform stylus profilometry*
yes no
One measurement per wafer, for features >40um in width.
Resist thickness
Resist thickness*
Batch size 1
Design size
Size of design on mask
 15.5 mm
Magnification 5
Perform hardbake none
Wafer size
Wafer size