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5X i-line photolithography (image reversal): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
5X i-line photolithography (image reversal)
Process characteristics:
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer, must be 0.3 .. 5 µm
0.3 .. 5 µm
Min feature size
Minimum feature size in the design that will be written on the wafer. (the corresponding feature size on the mask should be 5 times larger.)
Min feature size*
Minimum feature size in the design that will be written on the wafer. (the corresponding feature size on the mask should be 5 times larger.) , must be 0.8 .. 10 µm
0.8 .. 10 µm
Perform edge bead removal
Perform edge bead removal*
yes no
Perform linewidth metrology
Two measurement per wafer
Perform linewidth metrology*
yes no
Two measurement per wafer
Perform microscope inspection
30 mins inspection per wafer
Perform microscope inspection*
yes no
30 mins inspection per wafer
Perform stylus profilometry
One measurement per wafer, for features >40um in width.
Perform stylus profilometry*
yes no
One measurement per wafer, for features >40um in width.
Resist thickness
Resist thickness*
Batch size 1
Design size
Size of design on mask
 15.5 mm
Magnification 5
Perform hardbake none
Wafer size
Wafer size
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