on front E-beam evaporation |
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| Process characteristics: |
| Adhesion layer material In necessary please specify the adhesion material. |
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| Adhesion layer thickness thickness of adhesion layer |
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| Material Choose the main metal for evaporation. |
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| Thickness Allowed thickness ranges for main materials are as follows:
Al < 1um
Ti < 0.15um
Cr < 0.1um
Pt < 0.1um |
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| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
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| Batch size |
8 |
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| Sides processed |
either |
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| Wafer size |
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| Equipment |
Enerjet E-beam
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| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
rotating orbital |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, glass (category), indium phosphide, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 1000 µm |
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