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Plasma Bond Activation and Non-Aligned Prebonding: View
Process Hierarchy
Bonding
   Anodic bonding
   Fusion bonding
   Glass frit bonding
   Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Plasma Bond Activation and Non-Aligned Prebonding
Ambient
Ambient to which substrate is exposed during processing
trifluoromethane, oxygen, carbon tetrafluoride
Batch sizes 100 mm: 2
Wafer size
Wafer size
Equipment Plasmalab MicroEtch
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon carbide, silicon, gallium arsenide
Wafer thickness
List or range of wafer thicknesses the tool can accept
0 .. 1000 µm