Diamond CVD (standard): View

on front Diamond CVD (standard)

Process characteristics:

Thickness

Amount of material added to a wafer

0.5 .. 3 µm

Coeffient of Thermal Expansion (CTE)

@300K 1atm

1.5e-06 1/°C

Deposition rate

Rate at which material is added to a wafer

0.1 µm/hour

Excluded materials

gallium arsenide, gold (category), copper

Material

diamond

Microstructure

polycrystalline

Pressure

Pressure of process chamber during processing

25 Torr

Resistivity

1e+13 Ω*cm

Sides processed

either

Temperature

725 °C

Uniformity

-10 .. 10

Young's Modulus

1e+06 .. 1.2e+06 MPa

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 9, 150 mm: 4, 200 mm: 1, 300 mm: 1

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 2000 µm

Comments:

Standard diamond films: grain size typically 50% of film thickness, with a strong Raman peak.