Silicon Nitride PECVD (STS): View

on front Silicon Nitride PECVD (STS)

Process characteristics:

Thickness

Amount of material added to a wafer

0.1 .. 2 µm

Ambient

Ambient to which substrate is exposed during processing

nitrogen, silane, ammonia

Deposition rate

Rate at which material is added to a wafer

160 Å/min

Material

silicon nitride

Microstructure

amorphous

Pressure

Pressure of process chamber during processing

2.6 Torr

Residual stress

-100 .. 100 MPa

Sides processed

either

Temperature

300 °C

Uniformity

0.02

Wafer size

Equipment

Equipment characteristics:

Batch sizes

150 mm: 1

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, fused silica, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 675 µm