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E-beam metal evaporation (Temescal): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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E-beam metal evaporation (Temescal)
Process characteristics:
Material
Material*
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.02 .. 1 µm
0.02 .. 1 µm
Sides processed either
Temperature 22 °C
Wafer size
Wafer size
Equipment Temescal FCE 2700A Evaporator
  • For metals-
    Dome (Lift-off) + Planetary
Equipment characteristics:
Batch sizes 150 mm: 15
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, fused silica, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 900 µm