Low Stress silicon nitride LPCVD (300 MPa): View

Low Stress silicon nitride LPCVD (300 MPa)

Process characteristics:

Thickness

Thickness of material to be deposited.

0.05 .. 2 µm

Allowed materials

silicon, silicon nitride, polysilicon, silicon dioxide

Ambient

Ambient to which substrate is exposed during processing

dichlorosilane, ammonia

Deposition rate

Rate at which material is added to a wafer

31 Å/min

Material

silicon nitride

Pressure

Pressure of process chamber during processing

200 mTorr

Refractive index

2.2

Residual stress

200 .. 300 MPa

Sides processed

both

Temperature

810 °C

Uniformity

0.05

Wafer size

Equipment

Equipment characteristics:

Batch sizes

150 mm: 25

MOS clean

yes

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 675 µm