Wet oxidation: View

Wet oxidation

Process characteristics:

Thickness

Thickness of grown film.

0.5 .. 5 µm

Allowed materials

silicon, silicon dioxide, polysilicon, silicon nitride

Ambient

Ambient to which substrate is exposed during processing

oxygen, hydrogen

Growth rate

Rate at which film grows (linear approximation)

40 .. 100 Å/min

Material

silicon dioxide

Refractive index

1.46

Sides processed

both

Temperature

1100 .. 1200 °C

Uniformity

0.03

Wafer size

Equipment

Equipment characteristics:

Batch sizes

150 mm: 25

MOS clean

yes

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 675 µm