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5X I-line photolithography (OiR 897 10i): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
5X I-line photolithography (OiR 897 10i)
1 Dehydration bake
2 HMDS prime
MaterialHMDS
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3 I-line photoresist coat (OiR 897 10i)
MaterialArch OiR 897-10i
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4 Photoresist softbake
Materialphotoresist (category)
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5 5X stepper alignment and i-line exposure
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6 I-line develop (OiR 897 10i)
MaterialArch OiR 897-10i
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7 Microscope inspection
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8 UV bake
Process characteristics:
Perform deep uv bake
Perform deep uv bake*
yes no
Resist thickness
Resist thickness*
Batch size 12
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 square
Magnification 5
Material Arch OiR 897-10i
Max field size 10 mm
Min feature size 1 µm
Wafer size
Wafer size
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