Super Low-Stress LPCVD Silicon Nitride : View

Super Low-Stress LPCVD Silicon Nitride

Process characteristics:

Thickness

Thickness of material to be deposited.

0 .. 2 µm

Allowed materials

silicon (doped), polysilicon on silicon dioxide, silicon dioxide (category), silicon, silicon dioxide (low temperature), silicon dioxide, quartz (fused silica), silicon nitride, silicon nitride on silicon, silicon nitride on silicon dioxide, polysilicon, polysilicon on quartz, silicon (single crystal), silicon oxy-nitride, silicon on sapphire, silicon/glass composite, silicon nitride on quartz, silicon on insulator, silicon carbide, silicon dioxide on silicon, silicon germanium, quartz (single crystal)

Ambient

Ambient to which substrate is exposed during processing

dichlorosilane, ammonia

Material

silicon nitride

Refractive index

2.3

Residual stress

0 .. 50 MPa

Sides processed

both

Temperature

835 °C

Uniformity

-0.075 .. 0.075

Wafer size

Equipment

Furnace : Nitride

Equipment characteristics:

Batch sizes

100 mm: 25, 150 mm: 25

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

274 .. 700 µm