Wet Thermal Oxidation: View

Wet Thermal Oxidation

Process characteristics:

Thickness

Thickness of grown film.

0 .. 2 µm

Ambient

Ambient to which substrate is exposed during processing

oxygen, hydrogen

Material

silicon dioxide

Pressure

Pressure of process chamber during processing

1 atm

Refractive index

1.45

Sides processed

both

Temperature

950 °C

Uniformity

-0.07 .. 0.07

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 25, 150 mm: 25, 200 mm: 25

MOS clean

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 900 µm