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RCA clean with HF dip: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

RCA clean with HF dip
Excluded materials gold (category), copper
Process duration 120 min
Sides processed both
Temperature 80 °C
Wafer size
Wafer size
Equipment Wet bench #1
Equipment characteristics:
Batch sizes 100 mm: 25, 150 mm: 25, 200 mm: 25
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
274 .. 900 µm