E-beam Lithography: View

E-beam Lithography Down

Process characteristics:

Photoresist polarity

Resist thickness

Desired resist thickness.
Note that this depends on type of resist and the desired minimum feature size.

0.1 .. 1 µm

Min feature size

20 .. 80 nm

Voltage

50000 V

Wafer size

Equipment

Equipment characteristics:

Batch sizes

2 .. 100 mm: 1

Beam spot diameter

Area of the beam used to write the mask

3 .. 250 nm

Max field size

50 .. 800 µm

Piece dimension

Range of wafer piece dimensions the equipment can accept

2 .. 100 mm

Piece geometry

Geometry of wafer pieces the equipment can accept

rectangular

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 600 µm