Wet Thermal Oxidation: View

Wet Thermal Oxidation

Process characteristics:

Thickness

Thickness of grown film.

0.1 .. 6 µm

Material

silicon dioxide

Refractive index

1.45

Sides processed

both

Temperature

800 .. 1050 °C

Uniformity

-0.01 .. 0.01

Wafer size

Equipment

Tystar Oxide furnace

Equipment characteristics:

Batch sizes

100 mm: 50, 150 mm: 50

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 800 µm

Extra terms

No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site.