HF etch (10:1): View

HF etch (10:1)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 10 µm

Etch rate

800 Å/min

Etchant

Solutions and their concentrations.

HF (buffered)

Mask materials

Materials that can be used to mask etching.

silicon nitride

Material

silicon dioxide

Sides processed

both

Temperature

25 °C

Wafer size

Equipment

Wet bech #1

Equipment characteristics:

Batch sizes

100 mm: 25, 150 mm: 25

MOS clean

yes

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer holder

Device that holds the wafers during processing.

teflon cassette

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

quartz (fused silica), fused silica, silicon, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 1000 µm

Comments:

BOE etch.

Extra terms

No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site.