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Nanogetter packaging: View
Process Hierarchy
Bonding
   Anodic bonding
   Fusion bonding
   Glass frit bonding
   Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
   DUV Lithography
   Deep boron diffusion
   Hot Embossing
   LIGA
   Maskless lithography
   Microwave bonding
   Shape memory alloy deposition
   Silicon-germanium processes
   Supercritical dry
   Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Nanogetter packaging
Process characteristics:
Bonding Method
Wafer bonding method to be used
Bonding Method*
Wafer bonding method to be used
Capping material
Capping material
Capping material*
Capping material
Cavity etch
For an etch of cavity in the capping wafer if needed.
Cavity etch*
yes no
For an etch of cavity in the capping wafer if needed.
Depth
Depth of etch in capping wafer
Depth*
Depth of etch in capping wafer, must be 10 .. 550 µm
10 .. 550 µm
Thickness
Thickness of the NanoGetter to be deposited.
Thickness*
Thickness of the NanoGetter to be deposited., must be 5 .. 500 nm
5 .. 500 nm
Through wafer etch
For electrical connections through the capping substrate
Through wafer etch*
yes no
For electrical connections through the capping substrate
Wafer size
Wafer size
Comments:
  • This the complete module for packaging and activation of NanoGetters in a sealed cavity along with MEMS devices.
  • Due to complexity of this process and availability of several options, please contact us for more detail.
  • This module and component descriptions may not be accurate.
Attachments
NanoGetters.ppt (860.0 KB, application/vnd.ms-powerpoint)
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