Post-exposure bake (automated): View

Post-exposure bake (automated)

Batch size

Temperature

115 °C

Time

90 s

Wafer size

Equipment

Equipment characteristics:

MOS clean

yes

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 800 µm

Comments:

Stated temperature and time apply to thicknesses up to 4 microns.
For thicknesses greater than 4 microns process the same, but start with 30-second ramp in temperature (step-down to hotplate) to 115°C
Also for thicknesses greater than 4 microns hold for 35 minutes between exposure and post-exposure bake. This allows
water (which is necessary to complete the photo-reaction)
to diffuse back into the photoresist film.