on front HMDS prime (Automated) |
|---|
|
| Batch size |
1 |
|---|
| Material |
HMDS |
|---|
| Pressure Pressure of process chamber during processing |
0.1 mbar |
|---|
| Sides processed |
either |
|---|
| Temperature |
90 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
ACS200 coater/developer
|
| Equipment characteristics: |
| MOS clean |
yes |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 800 µm |
|---|
| Comments: |
|
MEMS and Nanotechnology Exchange