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| Duration |
5 hour |
|---|
| Materials |
BCB 4024-40, BCB 3022-63, BCB 4026-46 |
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| Sides processed |
either |
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| Temperature |
210 °C |
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| Wafer size |
|
|---|
| Equipment |
BCB cure oven |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 125 mm: 25, 150 mm: 25 |
|---|
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
cassette |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon germanium, silicon, silicon on insulator, indium phosphide, glass-ceramic, glass (Hoya), Foturan (Schott), germanium, Borofloat (Schott), quartz (single crystal), lithium niobate, Pyrex (Corning 7740), quartz (fused silica), ceramic, nickel, titanium, gallium phosphide, Corning Eagle 2000, Corning 1737, sapphire, fused silica, silicon carbide, silicon on sapphire, alumina, gallium arsenide |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1100 µm |
|---|
MEMS and Nanotechnology Exchange