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5X i-line photolithography (Automated): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
5X i-line photolithography (Automated)
1 Dehydration bake
on front
2 HMDS prime (Automated)
on front
3 Photoresist coat (automated)
4 Photoresist softbake (automated)
5 5X stepper align and expose
6 Post-exposure bake (automated)
on front
7 Photoresist develop (automated)
Process characteristics:
Resist thickness
make sure that the range matches with the
Resist thickness*
make sure that the range matches with the , must be 2.4 .. 4.5 µm
2.4 .. 4.5 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 equal line space
Field geometry
Shape of field with dimensions characterized by the maximum field size
 square
Magnification 5
Material Shipley SPR220-3
Max field size 18 mm
Min feature size 0.75 µm
Reticle size
Size of the reticle used in the stepper
 5"x5"
Wafer size
Wafer size
Comments:
  • Allowable wafer thickenesses:
  • 50mm = 250..305um;
  • 75mm = 350..400um;
  • 100mm = 500..550um;
  • 150mm = 650..700um
Attachments
AS200-Reticle_Design.pdf (2.9 MB, application/pdf)
Reticle design guidelines
AS200_GLOBALKEY_SMALL.gds (2048 bytes, application/octet-stream)
MASK_B_POS1.gds (14.0 KB, application/octet-stream)
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