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10X G-line photolithography (Shipley SPR 220-7): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
10X G-line photolithography (Shipley SPR 220-7)
1 Dehydration bake
2 HMDS prime
MaterialHMDS
on front
3 Photoresist coat (Shipley 220)
Thickness10 µm
on front
4 Photoresist softbake
on front
5 Stepper front-front alignment
on front
6 10X stepper G-line exposure
on front
7 Photoresist develop (Shipley 220)
on front
8 Microscope inspection
Batch size 1
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 square
Magnification 10
Material Shipley SPR220-7
Max field size 10 mm
Min feature size 8 µm
Resist thickness 10 µm
Wafer size
Wafer size
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