Thermocompression bonding |
|---|
|
| Process characteristics: |
| 1st bonded material Specify first material in bonded pair. |
|
|---|
| 2nd bonded material Specify second material in bonded pair. |
|
|---|
| Contact force Preferred contact force applied when bonding materials (if known). |
|
|---|
| Temperature Preferred bonding temperature (if known).
|
|
|---|
| Alignment tolerance Registration of CAD data to features on wafer |
5 µm |
|---|
| Batch size |
4 |
|---|
| Wafer size |
|
|---|
| Equipment |
Karl Suss Bond aligner
|
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
aluminum chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
|---|
| Comments: |
|
MEMS and Nanotechnology Exchange