Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Epoxy bonding (air, with alignment) Down
  1 Piranha clean (non-MOS clean)
on front
  2 Epoxy coat
Thickness5 .. 8 µm
on front
  3 Contact alignment (ABM)
  4 Epoxy bonding (air, with alignment)
Process characteristics:
Alignment type
Optical implies front-front align.
Backside IR implies front-back align.
Manual implies no fine alignment.
Alignment type*
Optical implies front-front align. Backside IR implies front-back align. Manual implies no fine alignment.
Perform piranha clean
If there are no metal parts on any of the wafers select standard piranha clean, otherwise an organic NMP clean will be performed.
Perform piranha clean*
yes no
If there are no metal parts on any of the wafers select standard piranha clean, otherwise an organic NMP clean will be performed.
Alignment tolerance
Registration of CAD data to features on wafer
 5 .. 8 µm
Ambient
Ambient to which substrate is exposed during processing
 air
Batch size 2
Bonded materials
Pair of materials bonded by this process
 glass (Hoya), Pyrex (Corning 7740), silicon, silicon on insulator
Pressure
Pressure of process chamber during processing
 1 atm
Wafer size
Wafer size
Comments:
  • A proprietary epoxy is used in this step.
  • It is possible to selectively coat on raised microstructures on wafers.
  • Selective epoxy coating available on samples with 20um+ topography.
  • Epoxy characteristics:
  • Shore D Hardness: 80-85
  • Lap Shear Strength: psi @ 23°C
  • Die Shear Strength: >10Kg/3,400 psi
  • Degradation Temp: 381°C
  • Operating Temp:
    Continuous: -55 to 125°C
    Intermittent: -55 to 300°C
  • Glass Transition Temp (Tg): 104°C
  • Coeff. of Thermal Expansion (CTE):
    Below Tg: 55 ´ 10 -6 in/in/°C
    Above Tg: 220 ´ 10 -6 in/in/°C
  • Storage Modulus: 354,000 psi