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Anodic bonding (air, with alignment): View
Process Hierarchy
Bonding
   Anodic bonding
   Fusion bonding
   Glass frit bonding
   Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Anodic bonding (air, with alignment)
1 Piranha clean (non-MOS clean)
on front
2 Contact alignment (ABM)
3 Anodic bonding (air, with alignment)
Process characteristics:
Alignment type
Optical implies front-front align.
Backside IR implies front-back align.
Manual implies no fine alignment.
Alignment type*
Optical implies front-front align. Backside IR implies front-back align. Manual implies no fine alignment.
Perform piranha clean
If there are no metal parts on any of the wafers select standard piranha clean, otherwise an organic NMP clean will be performed.
Perform piranha clean*
yes no
If there are no metal parts on any of the wafers select standard piranha clean, otherwise an organic NMP clean will be performed.
Alignment tolerance
Registration of CAD data to features on wafer
 5 .. 8 µm
Ambient
Ambient to which substrate is exposed during processing
 air
Batch size 2
Bonded materials
Pair of materials bonded by this process
 glass (Hoya), Pyrex (Corning 7740), silicon
Pressure
Pressure of process chamber during processing
 1 atm
Wafer size
Wafer size
Comments:
  • 1" to 4" diameter substrates.
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