Low-stress silicon nitride LPCVD (<50 MPa): View

Low-stress silicon nitride LPCVD (<50 MPa)

Process characteristics:

Thickness

Amount of material added to a wafer

0 .. 2 µm

Batch sizes

100 mm: 24

Deposition rate

Rate at which material is added to a wafer

40 Å/min

Excluded materials

gold

Material

silicon nitride

Measured film thickness variation (+/- %)

14.9

Refractive index

2.1 .. 2.3

Residual stress

0 .. 50 MPa

Setup time

60 min

Sides processed

both

Temperature

835 °C

Wafer size

Equipment

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

quartz boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 600 µm

Comments: